Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition

T. Sledziewski (1) , S. Beljakowa , K. Alassaad (2) , Pawel Kwasnicki (3) , R. Arvinte (4) , Sandrine Juillaguet (3) , M. Zielinski (4) , V. Souliere (2) , G. Ferro (2) , H. B. Weber (1) , M. Krieger (1)

1 Lehrstuhl für Theoretische Festkörperphysik
2 LMI - Laboratoire des Multimatériaux et Interfaces
3 GES - Groupe d'étude des semiconducteurs
4 NOVASiC

We have investigated the electrical properties of n-type 4H-SiC in-situ germanium-doped homoepitaxial layers grown by chemical vapor deposition. Germanium is an isoelectronic impurity and, therefore, not expected to contribute to the conductivity. However, Hall effect measurements taken on samples with and without germanium revealed an enhanced mobility by a factor of ≈2 at T ≈ 55 K in the germanium-doped sample despite equal free electron concentration and equal compensation. Deep level transient spectroscopy (DLTS) measurements taken on germanium-doped samples reveal negative peaks indicating the presence of charged extended defects.

Mots clés: Ge-doping; Hall mobility; Hall effect; admittance spectroscopy; DLTS

Domaines: Science des matériaux [cond-mat.mtrl-sci]

T. Sledziewski, S. Beljakowa, K. Alassaad, Pawel Kwasnicki, R. Arvinte, et al.. Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, Miyasaki, Japan. pp.261-+, ⟨10.4028/www.scientific.net/MSF.778-780.261⟩. ⟨hal-01936293⟩