Cu-SnAg Interconnects Evaluation for the Assembly at 10 mu m and 5 mu m Pitch

Abstract : Several types of interconnects for the finer pitch assembly are currently being investigated across the globe. Here in this paper, a new type of interconnect Ni3Sn4 Interconnect is proposed and evaluated for assembly at 10 pitch and below. The proposed interconnect is compared to traditional solder interconnect. The comparison is done on the basis of shape of the joints in interconnects, the electric yield and mechanical properties. Later, Ni3Sn4 IMC interconnect is also compared to known Cu3Sn IMC Interconnect.
Type de document :
Communication dans un congrès
2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017), 2017, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. IEEE, pp.376-383, 2017, Electronic Components and Technology Conference. 〈10.1109/ECTC.2017.154〉
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https://hal.archives-ouvertes.fr/hal-01914024
Contributeur : Hugo Van Landeghem <>
Soumis le : mardi 6 novembre 2018 - 16:22:16
Dernière modification le : lundi 25 février 2019 - 16:34:22

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Divya Taneja, Marion Volpert, Gilles Lasfargues, Bertrand Chambion, Boris Bouillard, et al.. Cu-SnAg Interconnects Evaluation for the Assembly at 10 mu m and 5 mu m Pitch. 2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017), 2017, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. IEEE, pp.376-383, 2017, Electronic Components and Technology Conference. 〈10.1109/ECTC.2017.154〉. 〈hal-01914024〉

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