Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si

Lipin Chen (1) , Oliver Skibitzki (2) , Yoan Léger (1) , Christophe Levallois (1) , Rozenn Piron (1) , Tony Rohel (1) , Julie Stervinou (1) , Antoine Létoublon (1) , Thomas Schroeder (2) , Charles Cornet (1)

1 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
2 IHP - Innovations for High Performance Microelectronics

III-V/Si epitaxial nanostructure materials are quite promising candidates for the development of Si photonics. We deeply investigate the structural and optical properties of an InGaP/SiGe/Si platform by transmission electron microscopy, X-ray diffraction, energy-dispersive X-ray elemental mapping and photoluminescence techniques and we demonstrate the contribution of 2D-vertical In-rich antiphase boundaries (APBs) to the photoluminescence. The nonstoichiometric In-rich APB structures are found to be responsible for the localization of excitons.

Domaines: Matériaux et structures en mécanique [physics.class-ph]; Physique Quantique [quant-ph]

Lipin Chen, Oliver Skibitzki, Yoan Léger, Christophe Levallois, Rozenn Piron, et al.. Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. 2018. ⟨hal-01909074v1⟩