High-quality Ge/Si virtual substrates fabricated by a low cost and scalable process

Youcef A. Bioud (1, 2) , Abderraouf A Boucherif (3, 2, 1) , Maksym Myronov (4) , Gilles Patriarche , Nadi Braidy (3) , Dominique A Drouin (3, 2, 1) , Richard A Arès (3, 2, 1)

1 3IT - Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke]
2 LN2 - Laboratoire Nanotechnologies Nanosystèmes
3 UdeS - Université de Sherbrooke
4 University of Warwick [Coventry]

In this presentation, we propose a new defect engineering strategy in highly mismatched hetero-epitaxy to simultaneously achieve low dislocation density and epi-ready Ge/Si virtual substrate using a highly scalable process. By self-assembling nanovoids around the Ge/Si interface from both sides through dislocation-selective electrochemical deep etching and thermal annealing, a continuous Ge layer is obtained, in which, a large portion of the original threading dislocations are pinned and annihilated close to a free surface, giving a new configuration so-called “Nanovoids-based Ge/Si Virtual Substrate (NVS)”.

Mots clés: Dislocation annihilation; Voids formation; Porous Materials; Germanium crystal; Defect Density; Epitaxy growth

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Youcef A. Bioud, Abderraouf A Boucherif, Maksym Myronov, Gilles Patriarche, Nadi Braidy, et al.. High-quality Ge/Si virtual substrates fabricated by a low cost and scalable process. 9th International SiGe Technology and Device Meeting (ISTDM), May 2018, Potsdam, Germany. ⟨hal-01906582⟩