VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs

Besar Asllani (1, 2, 3) , Asad Fayyaz (2) , Alberto Castellazzi (2) , Hervé Morel (1, 3) , Dominique Planson (1, 3)

1 EE - Ampère, Département Energie Electrique
2 Power Electronics Machines and Control (PEMC) Group
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon

V TH subthreshold hysteresis measured in commercially available 4H-SiC MOSFET is more pronounced in trench than in planar ones. All planar devices from different manufacturers exhibit an inverse temperature dependence, with the hysteresis amplitude reducing as the temperature increases, whereas all trench devices from different manufacturers exhibit the opposite behaviour. A physical interpretation is proposed, based on experimental evidence, which demonstrates that temperature dependence of the V TH subthreshold hysteresis is related to the technology. The findings are relevant to the ongoing discussion on SiC bespoke validation standards development and contribute important new insight.

Domaines: Electronique

Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson. VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩. ⟨hal-01889461⟩