3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates

Daniela Munteanu (1) , Jean-Luc Autran (1) , Mathieu Moreau (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

The bipolar amplification and charge collection of Planar Double-Gate and FinFET with independent gates is simulated. The transient response of independent gate devices is compared to that of conventional devices having the gates tied together.

Mots clés: Double-Gate; FinFET; independent gates; single event transient; heavy ion; charge collection; bipolar amplification

Domaines: Micro et nanotechnologies/Microélectronique; Sciences de l'ingénieur [physics]

Daniela Munteanu, Jean-Luc Autran, Mathieu Moreau. 3D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET with Independent Gates. Conference on Radiation Effects on Components and Systems (RADECS), Sep 2008, Jyväskylä, Finland. pp.280-283, ⟨10.1109/RADECS.2008.5782727⟩. ⟨hal-01841105⟩