Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films

F. Mercier (1) , H. Shimoda , S. Lay (1) , M. Pons (1) , E. Blanquet (1)

1 SIMaP - Science et Ingénierie des Matériaux et Procédés

Processing of Ti1-xAlxN thin films by the reactive chemical vapor deposition (R-CVD) technique has been performed from the reaction between a titanium tetrachloride (TiCl4-H-2) gas mixture and (0001) c-plane monocrystalline aluminium nitride (AlN) films at high temperatures, in the 800-1200 degrees C range. As a typical result, the growth of epitaxial 70 nm thick layers of (111)-fcc Ti1-xAlxN (0.05 = x = 0.65) has been processed. Multicomponent mass transport and diffusion modelling is proposed to assess the experimental results. A good agreement is found between the experimental thickness of the transformed zones and the calculated titanium diffusion length in AlN. Fcc-Ti1-xAlxN phase formation can be regarded as a diffusion-controlled mechanism. The novel experimental methodology developed in this work could help in understanding the complex formation and stability of this technologically important material.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Matériaux

F. Mercier, H. Shimoda, S. Lay, M. Pons, E. Blanquet. Reactive chemical vapor deposition of heteroepitaxial Ti1-xAlxN films. CrystEngComm, 2018, 20 (12), pp.1711-1715. ⟨10.1039/c7ce02129a⟩. ⟨hal-02067845⟩