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Charge photo-carrier transport from silicon nanocrystals embedded in SiO 2 -based multilayer structures

Abstract : Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by carrier transport through quantum-confined silicon nanocrystals embedded in the SiO2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which carrier transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density Jph of 1–2 mA cm−2 is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells.
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B. Dridi Rezgui, F. Gourbilleau, D. Maestre, Olivier Palais, A. Sibai, et al.. Charge photo-carrier transport from silicon nanocrystals embedded in SiO 2 -based multilayer structures. Journal of Applied Physics, American Institute of Physics, 2012, 112 (2), pp.024324. ⟨10.1063/1.4737579⟩. ⟨hal-01820409⟩

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