Ni silicides formation: use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms.

Mike El Kousseifi , Khalid Hoummada (1) , Thierry Epicier (2) , Dominique Mangelinck (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 MATEIS - Matériaux, ingénierie et science [Villeurbanne]

The Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10% Pt) film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10% Pt) allows revealing the lateral growth of NiSi.

Domaines: Matériaux

Mike El Kousseifi, Khalid Hoummada, Thierry Epicier, Dominique Mangelinck. Ni silicides formation: use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms.. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. pp.257-259. ⟨hal-01814294⟩