RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide

Gaël Gautier (1) , Marie Capelle (1, 2) , Jérôme Billoue (1) , Frédéric Cayrel (1) , Patrick Poveda (2)

1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
2 ST-TOURS - STMicroelectronics [Tours]

For the first time, inductors were integrated on porous silicon carbide to study the effect of this substrate on radio-frequency (RF) performances. n-Type heavily doped 4H-SiC substrates were anodized in an HF-based electrolyte to produce 6- and 15-μm-thick porous layers. An improvement of the quality factor was demonstrated on porous SiC with regard to SiC bulk. This promising result shows the decrease of substrate losses at the high frequencies with the porous SiC substrate. Thus, porous SiC could have an interest for the integration of RF power devices.

Mots clés: n-type porous 4H silicon carbide; Inductors; RF planar inductor electrical performances

Domaines: Micro et nanotechnologies/Microélectronique

Gaël Gautier, Marie Capelle, Jérôme Billoue, Frédéric Cayrel, Patrick Poveda. RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide. IEEE Electron Device Letters, 2012, 33 (4), pp.477-479. ⟨10.1109/LED.2012.2185478⟩. ⟨hal-01810907⟩