n-p junction formation in p-type silicon by hydrogen ion implantation

Damien Barakel (1) , A Ulyashin , I Perichaud , S Martinuzzi

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Hydrogen ion implantations at an energy of 250keV and a dose of 3 x 10(16) cm(-2) were applied to float zone, Czochralski grown silicon wafers and to multicrystalline samples. It was found that after annealing at 350degreesC < T < 550degreesC for 1 h a n-p junction is formed and a photovoltaic behaviour is observed. Spectral responses show that the photocurrent in the near infrared part of the spectrum is comparable to that given by a standard silicon solar cell. The depth of the junction is about 2mum and C-V measurements show that the junction is graduated. Hydrogen plasma immersion leads to similar results. The conversion of p- to n-type silicon is explained by the formation of shallow donor levels associated to a high concentration of hydrogen. (C) 2002 Elsevier Science B.V. All rights reserved.

Domaines: Micro et nanotechnologies/Microélectronique; Matériaux; Optique / photonique; Traitement du signal et de l'image [eess.SP]; Electronique

Damien Barakel, A Ulyashin, I Perichaud, S Martinuzzi. n-p junction formation in p-type silicon by hydrogen ion implantation. Solar Energy Materials and Solar Cells, 2002, 72 (1-4), pp.285-290. ⟨10.1016/S0927-0248(01)00176-3⟩. ⟨hal-01802924⟩