Investigation of Direct Current Electrical Properties of Electrochemically Etched Mesoporous Silicon Carbide

Gaël Gautier (1) , Jérôme Biscarrat (1, 2) , Thomas Defforge (1) , Angélique Fèvre (1, 2) , Damien Valente (1) , A Gary , Samuel Menard (1, 2)

1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
2 ST-TOURS - STMicroelectronics [Tours]

Mots clés: Etching; Carbides; Ultraviolet light; Microelectromechanical systems; Wide bandgap semiconductors; Porous materials; Electrical resistivity; Silicon; Doping

Domaines: Micro et nanotechnologies/Microélectronique

Gaël Gautier, Jérôme Biscarrat, Thomas Defforge, Angélique Fèvre, Damien Valente, et al.. Investigation of Direct Current Electrical Properties of Electrochemically Etched Mesoporous Silicon Carbide. Journal of Applied Physics, 2014, 116 (22), pp.223705. ⟨10.1063/1.4904085⟩. ⟨hal-01784775⟩