A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon

Nabil Daghbouj (1) , Nikolay Cherkashin (1) , Alain Claverie (1)

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

H and He sequential ion implantation of silicon followed by annealing leads to the formation of gas pressurized cavities. When close enough to the surface, they elastically deform this surface and generate blisters. Gaining knowledge of the characteristics and thermal behavior of these blisters is mandatory for the optimization of the Smart Cut™ process. In this paper, we develop the idea and demonstrate that the pressure and the concentrations of the gases inside a blister can be inferred from its actual dimensions and depth location by using simulations based on Finite Element Method (FEM) modelling. We apply this method to initiate a study on the influence of the respective fluences of H and He ions used in a sequential implantation on blistering efficiency.

Mots clés: Defects in silicon; Elastic deformation; Ion implantation

Domaines: Physique [physics]

Nabil Daghbouj, Nikolay Cherkashin, Alain Claverie. A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in silicon. Microelectronic Engineering, 2018, 190, pp.54-56. ⟨10.1016/j.mee.2018.01.006⟩. ⟨hal-01736187⟩