Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition

I.L. Krestnikov , N.N. Ledentsov , M.V. Maximov , D. Bimberg , D.A. Bedarev , I.V. Kochnev , V.M. Lantratov , Nikolay Cherkashin (1, 2) , Yu.G. Musikhin , Zh.I. Alferov

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
2 A.F. Ioffe Physical-Technical Institute

Domaines: Physique [physics]

I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, D. Bimberg, D.A. Bedarev, et al.. Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 2000, pp.355-358. ⟨hal-01736132⟩