Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS

O. Weber (1) , Y. Bogumilowicz (1) , T. Ernst (1) , J.-M. Hartmann (1) , F. Ducroquet (1) , F. Andrieu (2, 1) , C. Dupré (1) , L. Clavelier (1) , C. Le Royer (1) , Nikolay Cherkashin (3) , Martin Hÿtch (4) , D. Rouchon (1) , H. Dansas (1) , A.-M. Papon (1) , V. Carron (1) , C. Tabone (1) , S. Deleonibus (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP - Institut de Microélectronique, Electromagnétisme et Photonique
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
4 CEMES - Centre d'élaboration de matériaux et d'études structurales

Epitaxial strained Si and Ge n- and p-MOSFETs with a TiN/HfO2 gate stack were fabricated with the same process for a dual channel integration scheme. Compared to the HfO2/Si reference, X1.7 strained Si electron and X9 strained Ge hole mobility gains are demonstrated, achieving symmetric n- and p-MOSFET IDsat performance. This X9 strained Ge hole mobility enhancement highly exceeds previous reported results on Ge pMOSFETs with high-k dielectrics. For the first time, such a hole mobility enhancement, theoretically predicted and experimentally reported with thick SiO2 gate dielectrics, is demonstrated with a thin high-k gate dielectric (EOT=14Aring)

Domaines: Physique [physics]

O. Weber, Y. Bogumilowicz, T. Ernst, J.-M. Hartmann, F. Ducroquet, et al.. Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS. IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩. ⟨hal-01736083⟩