Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications

Sandrine Lhostis (1) , Clement Gaumer (1) , Caroline Bonafos (2) , Sylvie Schamm-Chardon (2) , Nikolay Cherkashin (2) , Francois Pierre (3) , Aurélien Fanton (3) , Christine Morin (1) , F. Ferrieu (1) , Mikael Casse (3) , Xavier Garros (3) , Charles Leroux (3)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

The downscaling in CMOS transistors requires the introduction of new materials with a higher dielectric constant. The electrical properties of HfxZryOz films and ZrO2 / HfO2 bi-layers grown by Atomic Vapor Deposition were analyzed for their integration as gate oxides. While crystallinity of those layers was found to be dependent on their zirconium concentration, the electrical performance was shown to depend mainly on the growth temperature of the high-k films.

Domaines: Physique [physics]

Sandrine Lhostis, Clement Gaumer, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Crystalline Structure of HfZrO Thin Films and ZrO2 / HfO2 bi-Layers Grown by AVD for MOS Applications. ECS Transactions, 2008, Unknown, Unknown Region. ⟨10.1149/1.2911489⟩. ⟨hal-01736062⟩