The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

V.S. Sizov , A.F. Tsatsulnikov (1) , A.V. Sakharov (1) , W.V. Lundin , E.E. Zavarin (1) , Nikolay Cherkashin (2, 3) , Martin Hÿtch (4) , A.E. Nikolaev , A.M. Mintairov , Y. He (5) , J.L. Merz

1 RAS - Russian Academy of Sciences [Moscow]
2 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
3 A.F. Ioffe Physical-Technical Institute
4 CEMES - Centre d'élaboration de matériaux et d'études structurales
5 School of Electronic Information [Wuhan]

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1–3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Domaines: Physique [physics]

V.S. Sizov, A.F. Tsatsulnikov, A.V. Sakharov, W.V. Lundin, E.E. Zavarin, et al.. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes. Semiconductors, 2010, 44 (7), pp.924-930. ⟨10.1134/S106378261007016X⟩. ⟨hal-01736047⟩