Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

A.F. Tsatsulnikov (1) , W.V. Lundin , E.E. Zavarin (1) , A.E. Nikolaev , A.V. Sakharov (1) , M.M. Rozhavskaya , S.O. Usov (1) , P.N. Brunkov (1) , M.A. Synitsin , D.V. Davydov , M.N. Mizerov (2) , Nikolay Cherkashin (3)

1 RAS - Russian Academy of Sciences [Moscow]
2 A.F. Ioffe Physical-Technical Institute
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

The results of studies of the properties of composite InGaN/GaN/InAlN heterostructures are reported. It is shown that, in the InAlN layer, there is substantial phase separation that brings about the formation of three-dimensional islands consisting of AlN-InAlN-AlN regions. The dimensions of these islands depend on the thickness of the InAlN layer and the conditions of epitaxial growth. Interruptions in the growth of InAlN provide a means for influencing the structural properties of the InAlN islands. The use of composite InGaN/GaN/InAlN heterostructures, in which the InGaN layer with a high In content serves as the active region in light-emitting diode structures, makes it possible to achieve emission in the yellow-red wavelength range 560–620 nm.

Domaines: Physique [physics]

A.F. Tsatsulnikov, W.V. Lundin, E.E. Zavarin, A.E. Nikolaev, A.V. Sakharov, et al.. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region. Semiconductors, 2012, 46 (10), pp.1281-1285. ⟨10.1134/S1063782612100168⟩. ⟨hal-01736035⟩