Comprehensive Study into Underlying Mechanisms of Anomalous Gate Leakage Degradation in GaN High Electron Mobility Transistors

Mukherjee Kalparupa (1) , Frédéric Darracq (2) , Arnaud Curutchet (3) , Nathalie Malbert (3) , Nathalie Labat (2)

1 UB - Université de Bordeaux
2 IMS - Laboratoire de l'intégration, du matériau au système
3 NANOELECTRONIQUE/III-V

Domaines: Electronique

Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. Comprehensive Study into Underlying Mechanisms of Anomalous Gate Leakage Degradation in GaN High Electron Mobility Transistors. IRPS 2018, Mar 2018, San Francisco, United States. ⟨hal-01718850⟩