Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar , Nathalie Labat (1) , Arnaud Curutchet (1) , N. Defrance (2) , Marie Lesecq (2) , J.C. Dejaeger (2) , Nathalie Malbert (3)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
3 NANOELECTRONIQUE/III-V

Domaines: Electronique

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, et al.. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectronics Reliability, 2016. ⟨hal-01718762⟩