Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology

D. Boudier (1) , B. Cretu (1) , E. Simoen (2) , Régis Carin (1) , A. Veloso , N. Collaert (3) , A. Thean (2)

1 Equipe Electronique - Laboratoire GREYC - UMR6072
2 IMEC - IMEC
3 KI-NANO - Kavli Institute of Nanosciences [Delft]

Domaines: Micro et nanotechnologies/Microélectronique

D. Boudier, B. Cretu, E. Simoen, Régis Carin, A. Veloso, et al.. Low frequency noise assessment in n- and p-channel sub-10nm triple-gate FinFETs: Part I: Theory and methodology. Solid-State Electronics, 2017, 128, pp.102 - 108. ⟨10.1016/j.sse.2016.10.012⟩. ⟨hal-01712351⟩