Evaluation of multi-void and drain metallization thickness effects on the electro thermal behavior of Si MOSFET under forward bias conditions

Son Ha Tran (1) , Laurent Dupont (1) , Zoubir Khatir (1)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie

Single and multi-voids position effects will be highlighted from an electrothermal viewpoint. Complementary numerical investigations will show that these effects are strongly dependent on the properties of the backside metallization of the MOSFET chip. The methodology based on a coupled analysis of electrothermal modeling and experiments that led to these conclusions will be detailed.

Mots clés: DIE ATTACH; ELECTROTHERMAL MODELING; FINITE ELEMENTS METHOD; LOW-VOLTAGE MOSFET; PACKAGING; SOLDER; VOID

Mots clés: METHODE DES ELEMENTS FINIS; ELECTRONIQUE

Domaines: Electronique

Son Ha Tran, Laurent Dupont, Zoubir Khatir. Evaluation of multi-void and drain metallization thickness effects on the electro thermal behavior of Si MOSFET under forward bias conditions. EPE'17 ECCE Europe - 19th European Conference on Power Electronics and Applications, Sep 2010, Varsovie, Poland. pp.1-10, ⟨10.23919/EPE17ECCEEurope.2017.8099235⟩. ⟨hal-01703938⟩