Thin and edgeless sensors for ATLAS pixel detector upgrade
Résumé
To cope with the harsh environment foreseen at the high luminosity conditions of HL-LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μm thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY. In terms of hit-efficiency, the first production reaches 99 % before irradiation and the second one reaches 96.3% after a fluence in excess of 1× 1016neq/cm2. The performances of those two productions before and after irradiation will be presented in details.