Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s

Thomas Ferrotti (1) , B. Blampey (2) , C. Jany (2) , Hélène Duprez (1) , A. Chantre (3) , F. Boeuf (3) , Christian Seassal (1) , B. Ben Bakir (2)

1 INL - Photonique - INL - Nanophotonique
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 ST-CROLLES - STMicroelectronics [Crolles]

In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

Mots clés: Integrated optoelectronics circuits; Photonic integrated circuits; Waveguide modulators; Semiconductor lasers; Traveling-wave devices

Domaines: Physique [physics]; Micro et nanotechnologies/Microélectronique; Optique / photonique; Optique [physics.optics]; Matériaux

Thomas Ferrotti, B. Blampey, C. Jany, Hélène Duprez, A. Chantre, et al.. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s. Optics Express, 2016, 24 (26), pp.30379-30401. ⟨10.1364/OE.24.030379⟩. ⟨hal-01701398⟩