Vulnerability and Hardening Studies of Optical and Illumination Systems at MGy Dose Levels

Abstract : In the framework of the fusion for energy radiation hard imaging system project, the main radiation effects affecting the image quality of a miniaturized complementary metal-oxide-semiconductor-based camera exposed to radiation doses up to 1 MGy(SiO 2 ) are investigated for ITER applications. The radiation effects related to two of the three subcomponents of the camera are investigated: the optical system (OS) and the illumination system (IS). Subsystem demonstrators have been manufactured selecting radiation tolerant or hardened materials and components to demonstrate the feasibility to withstand such high dose levels while fulfilling the ITER remote handling needs in terms of optical performances and miniaturization. Regarding the OS, the observed degradation of the radiation-hardened optical glasses used for the OS lenses is characterized in terms of both radiation-induced attenuation and radiation-induced refractive-index change. At the system level, impact of these phenomena on the OS demonstrator performances is discussed in terms of image contrast. Radiation test results highlight the high radiation tolerance of manufactured monochrome and color OS to both degradation mechanisms. Regarding the IS, the selected architecture consists in a ring of 20 commercially available light-emitting diodes (LEDs) with monochrome (amber) or white emissions. An appropriate choice for the LEDs allows designing an IS with the requested performances and slight degradation of its output power at the MGy dose levels. From the obtained results, developing miniaturized IS and OS subcomponents for MGy dose operation levels appears realistic using commercially available technologies and appropriate hardening procedures.
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T. Allanche, P. Paillet, V. Goiffon, C. Muller, M. van Uffelen, et al.. Vulnerability and Hardening Studies of Optical and Illumination Systems at MGy Dose Levels. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2018, 65 (1), pp.132-140. ⟨10.1109/TNS.2017.2783187⟩. ⟨hal-01684961⟩

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