Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns

Abstract : An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spec-troscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.
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Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21 (31), 〈10.1088/0953-8984/21/31/314015〉
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N. Barrett, Luiz Fernando Zagonel, O. Renault, A Bailly. Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns. Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21 (31), 〈10.1088/0953-8984/21/31/314015〉. 〈hal-01653031〉

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