Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns

N. Barrett (1) , Luiz Fernando Zagonel (2) , O. Renault (3) , A Bailly (3)

1 LENSIS - Laboratoire d'Etude des NanoStructures et Imagerie de Surface
2 LPS - Laboratoire de Physique des Solides
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

An accurate description of spatial variations in the energy levels of patterned semiconductor substrates on the micron and sub-micron scale as a function of local doping is an important technological challenge for the microelectronics industry. Spatially resolved surface analysis by photoelectron spectromicroscopy can provide an invaluable contribution thanks to the relatively non-destructive, quantitative analysis. We present results on highly doped n and p type patterns on, respectively, p and n type silicon substrates. Using synchrotron radiation and spherical aberration-corrected energy filtering, we have obtained a spec-troscopic image series at the Si 2p core level and across the valence band. Local band alignments are extracted, accounting for doping, band bending and surface photovoltage.

Domaines: Physique [physics]; Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

N. Barrett, Luiz Fernando Zagonel, O. Renault, A Bailly. Spatially resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns. Journal of Physics: Condensed Matter, 2009, 21 (31), ⟨10.1088/0953-8984/21/31/314015⟩. ⟨hal-01653031⟩