Skip to Main content Skip to Navigation
Journal articles

Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

Abstract : This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p+ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p++ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×1020 at.cm-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electrical measurements show a bipolar behaviour, and very high sustainable forward current densities ≥ 3 kA.cm-2, preserving a low leakage current density in reverse bias. These measurements were obtained on structures without any passivation and no edge termination.
Document type :
Journal articles
Complete list of metadata

Cited literature [7 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-01648360
Contributor : Publications Ampère <>
Submitted on : Monday, May 6, 2019 - 9:35:26 AM
Last modification on : Monday, September 13, 2021 - 2:44:04 PM
Long-term archiving on: : Tuesday, October 1, 2019 - 11:55:01 AM

File

rev131_hal.pdf
Files produced by the author(s)

Identifiers

Citation

Selsabil Sejil, Loïc Lalouat, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters. Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩. ⟨hal-01648360⟩

Share

Metrics

Record views

366

Files downloads

310