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CMOS active pixel sensors response to low energy light ions

Abstract : Recently CMOS active pixel sensors have been used in Hadrontherapy ions fragmentation cross section measurements. Their main goal is to reconstruct tracks generated by the non interacting primary ions or by the produced fragments. In this framework the sensors, unexpectedly, demonstrated the possibility to obtain also some informations that could contribute to the ion type identification. The present analysis shows a clear dependency in charge and number of pixels per cluster (pixels with a collected amount of charge above a given threshold) with both fragment atomic number Z and energy loss in the sensor. This information, in the FIRST (F ragmentation of I ons R elevant for S pace and T herapy) experiment, has been used in the overall particle identification analysis algorithm. The aim of this paper is to present the data analysis and the obtained results. An empirical model was developed, in this paper, that reproduce the cluster size as function of the deposited energy in the sensor.
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Submitted on : Thursday, November 23, 2017 - 10:25:34 AM
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E. Spiriti, Ch. Finck, J. Baudot, C. Divay, D. Juliani, et al.. CMOS active pixel sensors response to low energy light ions. Nucl.Instrum.Meth.A, 2017, 875, pp.35-40. ⟨10.1016/j.nima.2017.08.058⟩. ⟨hal-01645657⟩



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