3D TCAD Simulations for More Efficient SiC Power Devices Design

Luong Viet Phung (1) , Dominique Planson (1) , Pierre Brosselard (1) , Dominique Tournier (1) , C. Brylinski (2)

1 EE - Ampère, Département Energie Electrique
2 LMI - Laboratoire des Multimatériaux et Interfaces

SiC devices become more and more prominent in the power semiconductor industry. Thanks to a technology that seems to be mature enough, SiC devices become more and more sophisticated. Therefore, they can be serious competitors to existing silicon devices in not so distant future at least for high temperature and high power applications. In addition to undoubtedly better electrical and thermal properties, SiC devices still require attention regarding their design. Indeed, the material is still more expensive than silicon and some limitations such as the inability to create deep p-n junctions prevent from re-using existing silicon design. Therefore, SiC devices should be designed so that the best trade-off between active area and breakdown voltage is achieved. In such a context, 3D TCAD can be become an interesting approach mostly thanks to modern computer farms.

Domaines: Micro et nanotechnologies/Microélectronique

Luong Viet Phung, Dominique Planson, Pierre Brosselard, Dominique Tournier, C. Brylinski. 3D TCAD Simulations for More Efficient SiC Power Devices Design. ECS Transactions, 2013, 58 (4), pp.331 - 339. ⟨10.1149/05804.0331ecst⟩. ⟨hal-01636483⟩