Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport

Nicolas Thierry-Jebali (1, 2) , Mihai Lazar (2, 3) , Arthur Vo Ha (1) , Davy Carole (1) , Véronique Soulière (1) , Farah Laariedh (2, 3) , Jawad Ul Hassan (4) , Anne Henry (4) , Erik Janzén (4) , Dominique Planson (2, 3) , Gabriel Ferro (1) , Christian Brylinski (1) , Pierre Brosselard (2)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 EE - Ampère, Département Energie Electrique
3 INSA Lyon - Institut National des Sciences Appliquées de Lyon
4 IFM - Department of Physics, Chemistry and Biology [Linköping]

This paper deals with electrical characterization of PiN diodes fabricated on an 8° off-axis 4H-SiC with a p++ localized epitaxial area grown by Vapour-Liquid-Solid (VLS) transport. It provides for the first time evidence that a high quality p-n junction can be achieved by using this technique followed by a High Temperature Annealing (HTA) process.

Mots clés: Electrical Characterization; Localized Epitaxy; PiN Diode; VLS

Domaines: Energie électrique

Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo Ha, Davy Carole, Véronique Soulière, et al.. Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport. Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩. ⟨hal-01627792⟩