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Article Dans Une Revue IEEE Transactions on Industrial Electronics Année : 2017

A Novel Approach to Accurately Determine the tq Parameter of Thyristors

Hatem Garrab
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  • PersonId : 991818
Hervé Morel
Kamel Besbes
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Résumé

The continued use of high-voltage thyristor devices in industry and their increased use in high-voltage dc transmission systems call for more attention to the properties of these devices. One of the important thyristor parameters is their turn-off time tq, which can be a limiting factor when applying thyristors at elevated switching frequencies. Hence, the accurate measurement of tq and its variation versus the operating conditions remains a crucial task for thyristor converters operating at elevated switching frequencies. In this paper, a proper test circuit for measuring this parameter with a high level of accuracy has been designed and built. Owing to the test circuit specificity, the variation effects of several electrical and physical constraints, such as the forward current IF , the reverse applied voltage VR, the operating temperature To, and the ramp rate of the forward reapplied voltage dVD/dt, on the tq parameter of thyristors are also studied and analyzed based on the physics of semiconductor devices and associated simulations.
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Dates et versions

hal-01617496 , version 1 (18-11-2019)

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Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes. A Novel Approach to Accurately Determine the tq Parameter of Thyristors. IEEE Transactions on Industrial Electronics, 2017, 64 (1), pp.206 - 216. ⟨10.1109/tie.2016.2609381⟩. ⟨hal-01617496⟩
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