Anomalous C-V response correlated to relaxation processes in TiO 2 thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects

Abstract : Articles you may be interested in High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition J. Vac. Sci. Technol. A 33, 01A103 (2015); 10.1116/1.4891319 Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes J. Vac. Sci. Technol. B 31, 01A109 (2013); 10.1116/1.4768791 Atomic layer deposition grown metal-insulator-metal capacitors with RuO 2 electrodes and Al-doped rutile TiO 2 dielectric layer J. Vac. Sci. Technol. B 29, 01AC09 (2011); 10.1116/1.3534023 Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors Appl. Phys. Lett. 91, 172909 (2007); 10.1063/1.2803221 Oxygen-related dielectric relaxation and leakage characteristics of Pt /(Ba , Sr) TiO 3 / Pt thin-film capacitors Capacitance-voltage (C–V) and capacitance-frequency (C–f) measurements are performed on atomic layer deposited TiO 2 thin films with top and bottom Au and Pt electrodes, respectively, over a large temperature and frequency range. A sharp capacitance peak/discontinuity (C–V anomalous) is observed in the C–V characteristics at various temperatures and voltages. It is demonstrated that this phenomenon is directly associated with oxygen vacancies. The C–V peak irreversibility and dissymmetry at the reversal dc voltage are attributed to difference between the Schottky contacts at the metal/TiO 2 interfaces. Dielectric analyses reveal two relaxation processes with degeneration of the activation energy. The low trap level of 0.60–0.65 eV is associated with the first ionized oxygen vacancy at low temperature, while the deep trap level of 1.05 eV is associated to the second ionized oxygen vacancy at high temperature. The DC conductivity of the films exhibits a transition temperature at 200 C, suggesting a transition from a conduction regime governed by ionized oxygen vacancies to one governed by interstitial Ti 3þ ions. Both the C–V anomalous and relaxation processes in TiO 2 arise from oxygen vacancies, while the conduction mechanism at high temperature is governed by interstitial titanium ions. V C 2015 AIP Publishing LLC.
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Journal of Applied Physics, American Institute of Physics, 2015, 117 (15), pp.16937 - 16945. 〈10.1063/1.4917531〉
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A. Kahouli, C. Marichy, A. Sylvestre, N. Pinna. Anomalous C-V response correlated to relaxation processes in TiO 2 thin film based-metal-insulator-metal capacitor: Effect of titanium and oxygen defects. Journal of Applied Physics, American Institute of Physics, 2015, 117 (15), pp.16937 - 16945. 〈10.1063/1.4917531〉. 〈hal-01612018〉

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