Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches

Wassim Kafrouni (1) , Thomas Tillocher (1) , Julien Ladroue (2) , Philippe Lefaucheux (1) , Mohamed Boufnichel (2) , Pierre Ranson (1) , Rémi Dussart (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 ST-TOURS - STMicroelectronics [Tours]

Domaines: Sciences de l'ingénieur [physics]; Physique [physics]

Wassim Kafrouni, Thomas Tillocher, Julien Ladroue, Philippe Lefaucheux, Mohamed Boufnichel, et al.. Parametric study of STiGer etching process in order to reduce extended formation of scalloping defects on the sidewalls of silicon submicron trenches. Vacuum, 2016, 133, pp.90. ⟨10.1016/j.vacuum.2016.08.019⟩. ⟨hal-01577601⟩