Enhanced reproducibility of SiO2 atomic layer etching by addition of O2 steps

Thomas Tillocher (1) , Remi Dussart (1) , Nicolas Holtzer (1) , Philippe Lefaucheux (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés

Domaines: Physique des plasmas [physics.plasm-ph]

Thomas Tillocher, Remi Dussart, Nicolas Holtzer, Philippe Lefaucheux. Enhanced reproducibility of SiO2 atomic layer etching by addition of O2 steps. International Symposium of Dry Process 2016 (DPS2016), Nov 2016, Sapporo, Japan. ⟨hal-01561230⟩