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Second-order nonlinearities in strained silicon photonic structures

Abstract : Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, silicon is a centrosymmetric crystal, i.e. silicon doesn't have Pockels effect. Nevertheless, breaking the crystal symmetry of silicon can be used to overcome this limitation. This crystal modification is achieved by depositing a SiN high-stress overlayer. In this work, we present recent developments on the subject taking into account parasitic effects including plasma dispersion effect and fixed charge effect under an electric field. We theoretically and experimentally investigated Pockels effect in silicon waveguides and last results will be presented.
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https://hal.archives-ouvertes.fr/hal-01527436
Contributor : Laurent Vivien <>
Submitted on : Wednesday, May 31, 2017 - 2:10:09 PM
Last modification on : Monday, December 7, 2020 - 10:02:39 AM

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  • HAL Id : hal-01527436, version 1

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Pedro Damas, Xavier Le-Roux, Mathias Berciano, Guillaume Marcaud, Carlos Alonso-Ramos, et al.. Second-order nonlinearities in strained silicon photonic structures. SPIE Photonics West, 2017, San Francisco, United States. ⟨hal-01527436⟩

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