Advances in second order nonlinear effect in Silicon

P Damas (1) , X Le Roux (1) , M Berciano (1) , G Marcaud (1) , C Alonso-Ramos (1) , D Benedikovic (1) , E Cassan (1) , D Marris-Morini (1) , L Vivien (1)

1 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]

In this work, we present a theoretical model to determine the second order nonlinear coefficient under strain gradient in silicon. Furthermore, carrier effect due to applied electric field has also been taking into account to analyze the obtained experimental phase variation.

Domaines: Optique / photonique; Matériaux; Micro et nanotechnologies/Microélectronique

P Damas, X Le Roux, M Berciano, G Marcaud, C Alonso-Ramos, et al.. Advances in second order nonlinear effect in Silicon. 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), Jul 2016, Niigata, Japan. ⟨hal-01527372⟩