Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons

Claire A Berger (1, 2) , Dogukan A Deniz (2) , Jamey A Gigliotti (2) , James A Palmer (2) , John A Hankinson (2) , Yiran A Hu (2) , Jean-Philippe A Turmaud (2) , Renaud Puybaret (3) , Abdallah A Ougazzaden (3) , Anton A Sidorov (2) , Zhigang A Jiang (2) , Walt A de Heer (2)

1 NEEL - QuantECA - Circuits électroniques quantiques Alpes
2 Georgia Institute of Technology [Atlanta]
3 Georgia Tech Lorraine [Metz]

Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented.

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

Claire A Berger, Dogukan A Deniz, Jamey A Gigliotti, James A Palmer, John A Hankinson, et al.. Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons. N. Motta; F. Iacopi; C. Coletti. Growing Graphene on Semiconductors, PanStanford Publishing, 2017. ⟨hal-01513320⟩