Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films

Céline Lecerf (1) , Philippe Marie (1) , Cédric Frilay (1) , Julien Cardin (1) , Xavier Portier (1)

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

Photoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2 -> 4I9/2 and 4F3/2 -> 4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the

Domaines: Matériaux; Optique / photonique; Matière Condensée [cond-mat]

Céline Lecerf, Philippe Marie, Cédric Frilay, Julien Cardin, Xavier Portier. Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films. 2007 MRS Fall Meeting, Nov 2007, Boston, United States. ⟨10.1557/PROC-1111-D07-04⟩. ⟨hal-01498489⟩