Electrical characterization and TCAD simulations of multi-gate bulk nMOSFET

Inga Zbierska 1, 2 Liviu Militaru 2 Françis Calmon 2 Sylvain Feruglio 3 Guo-Neng Lu 1
1 INL - CSH - INL - Conception de Systèmes Hétérogènes
INL - Institut des Nanotechnologies de Lyon
2 INL - DE - INL - Dispositifs Electroniques
INL - Institut des Nanotechnologies de Lyon
3 SYEL - Systèmes Electroniques
LIP6 - Laboratoire d'Informatique de Paris 6
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Journal articles
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https://hal.archives-ouvertes.fr/hal-01488981
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Submitted on : Tuesday, March 14, 2017 - 10:12:08 AM
Last modification on : Thursday, March 21, 2019 - 1:12:24 PM

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Inga Zbierska, Liviu Militaru, Françis Calmon, Sylvain Feruglio, Guo-Neng Lu. Electrical characterization and TCAD simulations of multi-gate bulk nMOSFET. Microelectronics Journal, Elsevier, 2015, 46 (7), pp.588-592. ⟨10.1016/j.mejo.2015.03.018⟩. ⟨hal-01488981⟩

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