Simulation of CBRAM devices with the level set method

P. Dorion (1) , O. Cueto (2) , M. Reyboz (2) , E. Vianello (2) , J. C. Barbé (2) , A Grigoriu (1) , Yvon Maday (1)

1 LJLL - Laboratoire Jacques-Louis Lions
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

A TCAD model for Chalcogenide based CBRAM is introduced. This model relies on the level set method to follow the growth of the filament in the electrolyte. We couple the level set method with physical equations which model the cations migration and the electric field in the electrolyte and in the filament. The formation and the dissolution of the filament can be simulated. Comparisons between simulations and electrical results are used to validate our model.

Domaines: Analyse numérique [math.NA]

P. Dorion, O. Cueto, M. Reyboz, E. Vianello, J. C. Barbé, et al.. Simulation of CBRAM devices with the level set method. 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2013), Sep 2013, Glasgow, United Kingdom. ⟨hal-01476510⟩