Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

Jean-Marc Belloir (1) , Vincent Goiffon (1) , Cédric Virmontois (2) , Philippe Paillet (3) , Mélanie Raine (3) , Pierre Magnan (1) , Olivier Gilard (2)

1 DEOS - Département Electronique, Optronique et Signal
2 CNES - Centre National d'Études Spatiales [Toulouse]
3 DAM/DIF - DAM Île-de-France

Dark Current Spectroscopy is tested for the first time on irradiated CMOS Image sensors (CIS) to detect and identify radiation-induced silicon bulk defects. Two different pinned photodiode CIS are tested: a 5MP Commercial-Off-The-Shelf (COTS) CIS from OmniVision (OV5647) and a 256x256 pixel custom CIS. These CISs are irradiated with alpha particles at various fluences and at two different particle energies in the custom CIS (4 MeV or < 500 keV). Several defect types are detected in both CIS (up to five in the custom CIS). The identity of the defects is investigated by measuring the activation energy of the dark current and the stability of the defects during an isochronal annealing. Two defects are identified in the custom CIS: the divacancy and the vacancy-phosphorus. This work proves that dark current spectroscopy can be used on irradiated CIS to detect and identify radiation-induced silicon bulk defects.

Mots clés: Dark Current Spectroscopy (DCS); Pinned PhotoDiode (PPD); CMOS Image Sensor (CIS); Irradiation; Radiation-induced defects; Traps; Dark current; Annealing; Activation energy

Domaines: Autre

Jean-Marc Belloir, Vincent Goiffon, Cédric Virmontois, Philippe Paillet, Mélanie Raine, et al.. Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors. IEEE Transactions on Nuclear Science, 2016, vol. 63 (n° 4), pp. 2183-2192. ⟨10.1109/TNS.2016.2548562⟩. ⟨hal-01450862⟩