Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer

Abstract : This paper presents a method to determine the mechanical properties of piezoelectric thin films. The vibrational behavior of microcantilevers and clamped–clamped beams actuated by aluminum nitride (AlN) piezoelectric films were analyzed in order to investigate the suitability of these devices as characterization tools. Different geometries of resonators composed of a free-standing structure made up of a TiPt/AlN/ TiPt piezoelectric stack were tested. The out-of-plane motion of the resonators was assessed by laser Doppler vibrometry. An AlN Young’s modulus of about 200GPa was extracted from resonance-frequency measurements by means of Comsol software simulations that allow taking into account AlN underetching. This value of Young’s modulus was compared to the one measured by a nanoindentation technique. The quality of crystallinity was also assessed using X-ray diffraction (XRD) measurements. We then estimated the residual stress (about 200MPa) using an interferometry measurement.
Type de document :
Article dans une revue
Physica Status Solidi A, 2016, 123 (1), pp.114 - 121
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https://hal.archives-ouvertes.fr/hal-01446379
Contributeur : Christine Froidevaux <>
Soumis le : mercredi 25 janvier 2017 - 20:08:39
Dernière modification le : dimanche 19 novembre 2017 - 01:19:39

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  • HAL Id : hal-01446379, version 1

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Etienne Herth, E. Algré, Jean-Yves Rauch, Jean-Claude Gerbedoen, Nicolas Defrance, et al.. Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer. Physica Status Solidi A, 2016, 123 (1), pp.114 - 121. 〈hal-01446379〉

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