Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature

C. Perrin , E. Ghegin , S. Zhiou , F. Nemouchi , P. Rodriguez , P. Gergaud , Philippe Maugis (1) , Dominique Mangelinck (1) , K. Hoummada (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

The composition and morphology of the product phase after the reaction of Ni thin film with In0.53Ga0.47As substrate at 350 degrees C were investigated by atom probe tomography, X-ray diffraction, and scanning electron microscopy. Results show the formation of a unique Ni-3(In0.53Ga0.47) As phase with a low concentration in-depth gradient of Ni and the decoration of the grain boundaries by In atoms. These analyses indicate that Ni is the main diffusing specie during the growth of Ni-3(In0.53Ga0.47) As phase. The volume of the product phase is higher than the volume of the consumed Ni film as expected for the formation of Ni-3(In0.53Ga0.47) As phase. Published by AIP Publishing.

Domaines: Micro et nanotechnologies/Microélectronique

C. Perrin, E. Ghegin, S. Zhiou, F. Nemouchi, P. Rodriguez, et al.. Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature. Applied Physics Letters, 2016, 109 (13), ⟨10.1063/1.4963132⟩. ⟨hal-01435222⟩