Phase formation in the Ni/n-InP contacts for heterogeneous III/V-silicon photonic integration

E. Ghegin , F. Nemouchi , J. Labar , C. Perrin , K. Hoummada (1) , S. Favier , S. Gurban , I. Sagnes

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

The metallurgical properties of the Ni/n-InP system meet a great interest for its use as a contact in the scope of Photonics laser application. We report the formation of a compositionally non-uniform Ni-In-P amorphous layer during the early stages of the contacts elaboration, which include HCl and Ar+ plasma cleanings prior to the metal DC sputtering. During various heat treatments, the coexistence of the Ni2P and Ni3P binary phases and the Ni-2(InP) ternary phase were observed while In release was featured. For temperatures equal to or greater than 350 degrees C we highlighted the formation of In phase. Thanks to RTP and long-time annealing processes, we pointed out the predominance of the diffusion and/or interfacial reactions on the formation of the Ni2P, Ni3P and Ni-2(InP) phases and that of nucleation or melting/solidification on the formation of In agglomerates. (C) 2015 Elsevier B.V. All rights reserved.

Domaines: Micro et nanotechnologies/Microélectronique

E. Ghegin, F. Nemouchi, J. Labar, C. Perrin, K. Hoummada, et al.. Phase formation in the Ni/n-InP contacts for heterogeneous III/V-silicon photonic integration. Microelectronic Engineering, 2016, 156 (SI), pp.86-90. ⟨10.1016/j.mee.2015.12.008⟩. ⟨hal-01435133⟩