Self-catalyzed growth of GaAs nanowires on silicon by HVPE

Zhenning Dong , Yamina Andre , Vladimir Dubrovskii , Catherine Bougerol (1) , Guillaume Monier , Reda Ramdani , Agnes Trassoudaine , Christine Leroux (2) , Dominique Castelluci , Evelyne Gil

1 NEEL - NPSC - Nanophysique et Semiconducteurs
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

We report on the first self -catalyzed growth of GaAs nanowires on patterned and non -patterned silicon (111) wafers by hydride vapor phase epitaxy (HVPE) with a record elongation rate of 30 !lm/h. The crystalline structure was analyzed using high resolution transmission electron microscopy (HRTEM). Self -catalyzed growth proceeds under gallium rich conditions at low -temperature (600 C). Nanowires exhibit cylindrical rod -like shape morphology with a mean diameter of 50 nm and are randomly distributed.

Domaines: Micro et nanotechnologies/Microélectronique

Zhenning Dong, Yamina Andre, Vladimir Dubrovskii, Catherine Bougerol, Guillaume Monier, et al.. Self-catalyzed growth of GaAs nanowires on silicon by HVPE. 2016 International Conference Laser Optics (LO), Jun 2016, St Petersburg, Russia. ⟨10.1109/LO.2016.7549901⟩. ⟨hal-01435124⟩