Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation

Hassen Aziza (1) , H. Ayari , S. Onkaraiah , Mathieu Moreau (1) , Jean-Michel Portal (1) , Marc Bocquet (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

In this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained. Impact of variability on a multilevel 1T-1R OxRRAM circuit is analyzed quantitatively at a circuit level to guarantee the robustness of the technology.

Domaines: Micro et nanotechnologies/Microélectronique

Hassen Aziza, H. Ayari, S. Onkaraiah, Mathieu Moreau, Jean-Michel Portal, et al.. Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation. 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), Apr 2016, Istanbul, Turkey. pp.1-5, ⟨10.1109/DTIS.2016.7483892⟩. ⟨hal-01434981⟩