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Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation

Abstract : In this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained. Impact of variability on a multilevel 1T-1R OxRRAM circuit is analyzed quantitatively at a circuit level to guarantee the robustness of the technology.
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https://hal.archives-ouvertes.fr/hal-01434981
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Submitted on : Friday, January 13, 2017 - 3:03:36 PM
Last modification on : Tuesday, March 30, 2021 - 3:20:39 AM

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Hassen Aziza, H. Ayari, S. Onkaraiah, Mathieu Moreau, Jean-Michel Portal, et al.. Multilevel Operation in Oxide Based Resistive RAM with SET voltage modulation. 2016 11TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS), Apr 2016, Istanbul, Turkey. pp.1-5, ⟨10.1109/DTIS.2016.7483892⟩. ⟨hal-01434981⟩

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