Low-loss Ge-rich Si0.2 Ge0.8 waveguides for mid-infrared photonics

Joan-Manel Ramirez 1 Vladyslav Vakarin 1 Clement Gilles 2 Jacopo Frigerio 3 Andrea Ballabio 3 Papichaya Chaisakul 1 Xavier Le Roux 1 Carlos Alonso-Ramos 1 Gregory Maisons 2 Laurent Vivien 1 Mathieu Carras 2 Giovanni Isella 3 Delphine Marris-Morini 1
1 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]
2 MirSense
3 Politecnico di Milano [Milan]
Abstract : We demonstrate low-loss Ge-rich Si0.2Ge0.8 waveguides on Si1-xGex (x from 0 to 0.79) graded substrates operating in the mid-infrared wavelength range, at λ = 4.6 µm. Propagation losses as low as (1.5 ± 0.5) dB/cm and (2 ± 0.5) dB/cm were measured for the quasi-TE and quasi–TM polarizations, respectively. Total coupling loss (input/output) of only 10 dB was found for waveguide widths larger than 7 µm due to a good fiber-waveguide mode matching. Near-field optical mode profiles measured at the output waveguide facet allowed to inspect the optical mode and precisely measure the modal effective area of each waveguide providing a good correlation between experiments and simulations. These results put forward the potential of low-index-contrast Si1-xGex waveguides with high Ge concentration as fundamental blocks for mid-infrared photonic integrated circuits.
Keywords : integrated optics devices mid infrared photonics
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Article dans une revue
Optics Letters, Optical Society of America, 2017, 〈10.1364/OL.42.000105〉
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Dernière modification le : jeudi 7 février 2019 - 14:28:59
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Joan-Manel Ramirez, Vladyslav Vakarin, Clement Gilles, Jacopo Frigerio, Andrea Ballabio, et al.. Low-loss Ge-rich Si0.2 Ge0.8 waveguides for mid-infrared photonics. Optics Letters, Optical Society of America, 2017, 〈10.1364/OL.42.000105〉. 〈hal-01430021〉

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