Ga2O3 filsm alloyed with SnO2 and treated by RF plasma : an interesting way for the development of transparent contacts for UV-emitting photonics devices

Frédéric Genty (1, 2) , Alban Maertens (2) , Samuel Margueron (2) , Adulfas Abrutis (3) , Thierry Belmonte (4) , Pascal Boulet (4) , Ausrine Bartasyte (5)

1 MEC - Mahindra Ecole Centrale [Hyderabad]
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 Department of General and Inorganic Chemistry
4 IJL - Institut Jean Lamour
5 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)

Layers of Ga2O3 alloyed up to 15 at% with Sn4+ has been studied after treatment by RF plasma. An increased conductivity was measured which is an interesting step towards transparent contacts for UV-emitting photonics devices.

Domaines: Matériaux

Frédéric Genty, Alban Maertens, Samuel Margueron, Adulfas Abrutis, Thierry Belmonte, et al.. Ga2O3 filsm alloyed with SnO2 and treated by RF plasma : an interesting way for the development of transparent contacts for UV-emitting photonics devices. International Conference on Fiber Optics and Photonics - PHOTONICS2016, Dec 2016, Kanpur, India. ⟨10.1364/photonics.2016.tu2d.1⟩. ⟨hal-01422031⟩