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Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

Abstract : We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-mu m glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of approximate to 4 x 10(11) W cm(-2) which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams. (C) 2015 AIP Publishing LLC.
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https://hal.archives-ouvertes.fr/hal-01418509
Contributor : Gaëlle Coustillier <>
Submitted on : Friday, December 16, 2016 - 5:39:24 PM
Last modification on : Wednesday, April 14, 2021 - 3:37:58 AM

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David Grojo, Alexandros Mouskeftaras, Philippe Delaporte, Shuting Lei. Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared. Journal of Applied Physics, American Institute of Physics, 2015, 117 (15), ⟨10.1063/1.4918669⟩. ⟨hal-01418509⟩

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