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Improvement of n-type OTFT electrical stability by gold electrode modification

Abstract : N-type organic thin film transistors (OTFT) containing modified gold electrodes have been fabricated to investigate the influence of the self assembled monolayer on the transistor characteristics. We report on the effect of drain/source modification by thiol derivatives on the performances, electrical parameters uniformity and electrical stability of C60 transistors. In the literature, electrical instability is often attributed to organic semiconductor (OSC), OSC-insulator interface and insulator. We found here that OSC-metal interfaces affect dramatically the operational stability for bottom gate/bottom contact structure. These effects have been attributed to morphological evolution at the interface metal-OSC induced by the self-assembled monolayers. © 2016 Elsevier B.V.
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https://hal-univ-rennes1.archives-ouvertes.fr/hal-01397914
Contributor : Laurent Jonchère <>
Submitted on : Wednesday, November 16, 2016 - 2:25:23 PM
Last modification on : Friday, July 10, 2020 - 4:24:39 PM

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M. Robin, M. Harnois, Y. Molard, E. Jacques. Improvement of n-type OTFT electrical stability by gold electrode modification. Organic Electronics, Elsevier, 2016, 39, pp.214--221. ⟨10.1016/j.orgel.2016.10.004⟩. ⟨hal-01397914⟩

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